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2n/pn/sst4391 series vishay siliconix document number: 70241 s-04028?rev. f, 04-jan-01 www.vishay.com 7-1 n-channel jfets 2n4391 pn4391 sst4391 2n4392 pn4392 sst4392 2n4393 pn4393 sst4393
part number v gs(off) (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) 2n/pn/sst4391 ?4 to ?10 30 5 4 2n/pn/sst4392 ?2 to ?5 60 5 4 2n/pn/sst4393 ?0.5 to ?3 100 5 4 low on-resistance: 4391<30 fast switching?t on : 4 ns high off-isolation: i d(off) with low leakage low capacitance: < 3.5 pf low insertion loss low error voltage high-speed analog circuit performance negligible ?off-error,? excellent accuracy good frequency response, low glitches eliminates additional buffering analog switches choppers sample-and-hold normally ?on? switches current limiters commutators the 2n/pn/sst4391 series features many of the superior characteristics of jfets which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. the 2n series hermetically-sealed to-206aa (to-18) can is available with processing per mil-s-19500 (see military information). both the pn, to-226aa (to-92), and sst, to-236 (sot-23), series are available in tape-and-reel for automated assembly (see packaging information). for similar dual products, see the 2n5564/5565/5566 data sheet. d s g and case to-206aa (to-18) top view 2n4391 2n4392 2n4393 1 23 to-226aa (to-92) top view pn4391 pn4392 pn4393 d g s 1 2 3 d s g to-236 (sot-23) 2 3 1 top view sst4391 (ca)* sst4392 (cb)* sst4393 (cc)* *marking code for to-236 for applications information see an104 and an106 .
2n/pn/sst4391 series vishay siliconix www.vishay.com 7-2 document number: 70241 s-04028 ? rev. f, 04-jan-01

gate-drain, gate-source voltage: (2n/pn prefixes) ? 40 v . . . . . . . . . . . . . . . . . . . (sst prefix) ? 35 v . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature 300 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature : (2n prefix) ? 65 to 200 c . . . . . . . . . . . . . . . . . . (pn/sst prefixes) ? 55 to 150 c . . . . . . . . . . . operating junction temperature : (2n prefix) ? 55 to 200 c . . . . . . . . . . . . . . . . . . (pn/sst prefixes) ? 55 to 150 c . . . . . . . . . . . power dissipation : (2n prefix) a (t c = 25 c) 1800 mw . . . . . . . . . . (pn/sst prefixes) b 350 mw . . . . . . . . . . . . . . . notes a. derate 10 mw/ c above 25 c b. derate 2.8 mw/ c above 25 c limits 4391 4392 4393 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a, v ds = 0 v ? 55 ? 40 ? 40 ? 40 gate-source v ds = 20 v 2n/pn: i d = 1 na v gate-source cutoff voltage v gs(off) v ds = 15 v sst: i d = 10 na ? 4 ? 10 ? 2 ? 5 ? 0.5 ? 3 2n 50 150 25 75 5 30 saturation drain current b i dss v ds = 20 v, v gs = 0 v pn 50 150 25 100 5 60 ma current b dss ds gs sst 50 25 5 v gs = ? 20 v 2n/sst ? 5 ? 100 ? 100 ? 100 v gs = ? 20 v v ds = 0 v pn ? 5 ? 1000 ? 1000 ? 1000 pa gate reverse current i gss 2n: t a = 150 c ? 13 ? 200 ? 200 ? 200 gss pn: t a = 100 c ? 1 ? 200 ? 200 ? 200 na sst: t a = 125 c ? 3 gate operating current i g v dg = 15 v, i d = 10 ma ? 5 2n: v gs = ? 5 v 5 100 2n: v gs = ? 7 v 5 100 pa 2n: v gs = ? 12 v 5 100 v ds = 20 v pn: v gs = ? 5 v 0.005 1 pn: v gs = ? 7 v 0.005 1 na pn: v gs = ? 12 v 0.005 1 sst v ds = 10 v, v gs = ? 10 v 5 100 100 100 pa drain cutoff current i d(off) 2n: v gs = ? 5 v 13 200 v ds = 20 v t = 150 c 2n: v gs = ? 7 v 13 200 t a = 150 c 2n: v gs = ? 12 v 13 200 pn: v gs = ? 5 v 1 200 na v ds = 20 v t = 100 c pn: v gs = ? 7 v 1 200 na t a = 100 c pn: v gs = ? 12 v 1 200 v ds = 10 v t a = 125 c sst: v gs = ? 10 v 3 i d = 3 ma 0.25 0.4 drain-source on-voltage v ds(on) v gs = 0 v i d = 6 ma 0.3 0.4 v on-voltage ds(on) gs i d = 12 ma 0.35 0.4 drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 30 60 100 gate-source i g = 1 ma 2n 0.7 1 1 1 gate-source forward voltage v gs(f) i g = 1 ma v ds = 0 v pn/sst 0.7 v
2n/pn/sst4391 series vishay siliconix document number: 70241 s-04028 ? rev. f, 04-jan-01 www.vishay.com 7-3 limits 4391 4392 4393 parameter symbol test conditions typ a min max min max min max unit dynamic common-source forward transconductance g fs 6 ms common-source output conductance g os v ds = 20 v, i d = 1 ma, f = 1 khz 25 s drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma , f = 1 khz 30 60 100 2n 12 14 14 14 common-source input capacitance c iss v ds = 20 v, v gs = 0 v f = 1 mhz pn 12 16 16 16 input capacitance iss f = 1 mhz sst 13 2n: v gs = ? 5 v 3.3 3.5 2n: v gs = ? 7 v 3.2 3.5 2n: v gs = ? 12 v 2.8 3.5 pn: v gs = ? 5 v 3.5 5 pf common-source reverse transfer c rss v ds = 0 v f = 1 mhz pn: v gs = ? 7 v 3.4 5 capacitance rss f = 1 mhz pn: v gs = ? 12 v 3.0 5 sst: v gs = ? 5 v 3.6 sst: v gs = ? 7 v 3.5 sst: v gs = ? 12 v 3.1 equivalent input noise voltage e n v ds = 10 v, i d = 10 ma f = 1 khz 3 nv ? hz switching 2n/pn 2 15 15 15 t d(on) sst 2 turn-on time 2n/pn 2 5 5 5 t r v dd = 10 v sst 2 v gs(h) = 0 v see switching circuit 2n/pn 6 20 35 50 ns t d(off) see switching circuit sst 6 turn-off time 2n/pn 13 15 20 30 t f sst 13 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. ncb b. pulse test: pw 300 s duty cycle 3%.
2n/pn/sst4391 series vishay siliconix www.vishay.com 7-4 document number: 70241 s-04028 ? rev. f, 04-jan-01 160 120 on-resistance and drain current vs. gate-source cutoff voltage on-resistance vs. drain current 100 0 ? 10 0 200 160 0 r ds i dss r ds @ i d = 1 ma, v gs = 0 v i dss @ v ds = 20 v, v gs = 0 v 100 0 1 10 100 on-resistance vs. temperature 200 ? 55 25 125 0 ? 15 85 i d = 1 ma r ds changes x 0.7%/ c turn-on switching 5 0 ? 10 4 3 2 1 0 switching time (ns) t d(on) @ i d = 3 ma t d(on) @ i d = 12 ma t r approximately independent of i d v dd = 5 v, r g = 50 w v gs(l ) = ? 10 v turn-off switching 30 010 24 18 12 6 0 v gs(off) = ? 2 v v gs(off) = ? 8 v t d(off) independent of device v gs(off ) v dd = 5 v, v gs(l) = ? 10 v capacitance vs. gate-source voltage 30 ? 20 24 18 12 6 0 capacitance (pf) f = 1 mhz v ds = 0 v 0 v gs(off) ? gate-source cutoff voltage (v) t a ? temperature (_c) v gs ? gate-source voltage (v) v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) i d ? drain current (ma) 80 60 40 20 80 40 80 60 40 20 ? 2 ? 4 ? 6 ? 8 ? 35 120 80 40 5 45 65 105 ? 2 ? 4 ? 6 ? 8 24 68 ? 4 ? 8 ? 12 ? 16 switching time (ns) v gs(off) = ? 2 v ? 4 v ? 8 v t a = 25 c t r v gs(off) = ? 2 v ? 4 v ? 8 v t d(off) c iss c rss t f r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) i dss ? saturation drain current (ma)
2n/pn/sst4391 series vishay siliconix document number: 70241 s-04028 ? rev. f, 04-jan-01 www.vishay.com 7-5 noise voltage vs. frequency 100 10 1 10 100 1 k 100 k 10 k v ds = 10 v forward transconductance and output onductance vs. gate-source cutoff voltage* 50 0 0 ? 2 ? 10 500 200 0 g fs and g os @ v ds = 20 v v gs = 0 v, f = 1 khz gate leakage current 030 t a = 125 c t a = 25 c common-gate input admittance 100 10 1 0.1 100 1000 200 500 (ms) v dg = 10 v i d = 10 ma t a = 25 c common-gate forward admittance common-gate reverse admittance 100 10 1 0.1 100 1000 200 500 (ms) v dg = 10 v i d = 10 ma t a = 25 c 10 1.0 0.1 0.01 100 1000 200 500 v dg = 10 v i d = 10 ma t a = 25 c (ms) v dg ? drain-gate voltage (v) v gs(off) ? gate-source cutoff voltage (v) f ? frequency (hz) f ? frequency (mhz) f ? frequency (mhz) f ? frequency (mhz) 40 30 20 10 ? 4 ? 6 ? 8 i gss @ 125 c 6 121824 400 200 100 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na i d = 1 ma i d = 10 ma g fs g os 1 ma i gss @ 25 c i d = 10 ma g ig b ig ? g fg b fg g fg ? g rg ? b rg +g rg 10 ma i g(on) @ i d 1 ma e n ? noise voltage nv / hz gos ? output conductance ( s) g fs ? forward transconductance (ms) i g ? gate leakage)
51 ? 51 ? 1 k ? v in scope v dd r l out v gs(h) v gs(l) 2n/pn/sst4391 series vishay siliconix www.vishay.com 7-6 document number: 70241 s-04028 ? rev. f, 04-jan-01 common-gate output admittance 100 10 1 0.1 100 1000 200 500 (ms) v dg = 10 v i d = 10 ma t a = 25 c f ? frequency (mhz) transfer characteristics 100 0 ? 5 80 60 40 20 0 v gs ? gate-source voltage (v) ? 1 ? 2 ? 3 ? 4 v ds = 20 v t a = ? 55 c 25 c transconductance vs. drain current 100 10 1 0.1 1.0 10 i d ? drain current (ma) v gs(off) = ? 2 v output characteristics 100 010 80 60 40 20 0 v ds ? drain-source voltage (v) 24 68 125 c g og b og t a = ? 55 c 125 c v gs = 0 v ? 0.5 v ? 1.0 v ? 1.5 v ? 2.0 v ? 2.5 v v gs(off) = ? 4 v 25 c v ds = 10 v f = 1 khz v gs(off) = ? 4 v g fs ? forward transconductance (ms) i d ? drain current (ma) i d ? drain current (ma)
4391 4392 4393 v gs(l) ? 12 v ? 7 v ? 5 v r l * 800 1600 3000 i d(on) 12 ma 6 ma 3 ma *non-inductive
rise time < 1 ns fall time < 1 ns pulse width 100 ns prf 1 mhz rise time 0.4 ns input resistance 10 m input capacitance 1.5 pf see typical characteristics curves for changes.
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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